FDC6310P datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

*
  –2.2 A,
  –20 V
* RDS(ON) = 125 mW @ VGS =
  –4.5 V
* RDS(ON) = 190 mW @ VGS =
  –2.5 V
* Low .

Application

where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features
*
–2.2 A,
&n.

Description

These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have.

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